The 19th American Conference on Crystal Growth and Epitaxy in conjunction with the 16th US Biennial Workshop on Organometallic Vapor Phase EpitaxyPASKOVA, Tania; CANEAU, Catherine; BHAT, Rajaram et al.Journal of crystal growth. 2014, Vol 393, issn 0022-0248, 178 p.Conference Proceedings

Future challenges for MOVPE: an industrial perspectiveBLAND, S. W.Journal of materials science. Materials in electronics. 2002, Vol 13, Num 11, pp 679-682, issn 0957-4522, 4 p.Article

The 16th International Conference on Crystal Growth (ICCG16)/The 14th International Conference on Vapor Growth and Epitaxy (ICVGE14), 8-13 August 2010, Beijing, ChinaCHEN, Chuangtian; KUECH, Thomas F; NISHINAGA, Tatau et al.Journal of crystal growth. 2011, Vol 318, Num 1, issn 0022-0248, 1203 p.Conference Proceedings

In-situ characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopyBHATTACHARYA, A; HABERLAND, K; POSER, F et al.SPIE proceedings series. 2002, pp 990-995, isbn 0-8194-4500-2, 2VolConference Paper

Mass flow and reaction analysis of the growth of GaN by HVPEKEMPISTY, P; GRZEGORY, I; BOCKOWSKI, M et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 131-134, issn 0031-8965, 4 p.Conference Paper

Crystallization of GaN by HVPE on pressure grown seedsGRZEGORY, I; LUCZNIK, B; BOCKOWSKI, M et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1654-1657, issn 1862-6300, 4 p.Conference Paper

Analysis of TMGa/NH₃/H₂ reaction system in GaN-MOVPE growth by computational simulationHIRAKO, A; KOISO, S; OHKAWA, K et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 7, pp 1716-1719, issn 1862-6300, 4 p.Conference Paper

Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl₃ and NH₃KUMAGAI, Y; TAKEMOTO, K; KIKUCHI, J et al.Physica status solidi. B. Basic research. 2006, Vol 243, Num 7, pp 1431-1435, issn 0370-1972, 5 p.Conference Paper

Characterisation of cubic SiC layers VPE grown on Si substrates of different conductivityFRIGERI, C; ATTOLINI, G; BOSI, M et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S303-S306, SUP1Conference Paper

MOVPE growth of InN with ammonia on sapphireDRAGO, M; VOGT, P; RICHTER, W et al.Physica status solidi. A. Applied research. 2006, Vol 203, Num 1, pp 116-126, issn 0031-8965, 11 p.Conference Paper

Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor depositionKUN ZHOU; IKEDA, Masao; HUI YANG et al.Journal of crystal growth. 2015, Vol 409, pp 51-55, issn 0022-0248, 5 p.Article

Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesionYLIVAARA, Oili M. E; XUWEN LIU; HAIMI, Eero et al.Thin solid films. 2014, Vol 552, pp 124-135, issn 0040-6090, 12 p.Article

Dynamic scaling and kinetic roughening of poly(ethylene) islands grown by vapor phase depositionCHOUKOUROV, Andrei; MELNICHUK, Iurii; BIEDERMAN, Hynek et al.Thin solid films. 2014, Vol 565, pp 249-260, issn 0040-6090, 12 p.Article

Effects of thermal treatment on radiative properties of HVPE grown InP layersLURYI, Serge; SEMYONOV, Oleg; SUBASHIEV, Arsen et al.Solid-state electronics. 2014, Vol 95, pp 15-18, issn 0038-1101, 4 p.Article

Evidence for two growth modes during tungsten oxide vapor deposition on mica substratesMASEK, Karel; GILLET, Marcel; MATOLIN, Vladimir et al.Journal of crystal growth. 2014, Vol 394, pp 67-73, issn 0022-0248, 7 p.Article

Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodesHOFFMANN, V; MOGILATENKO, A; NETZEL, C et al.Journal of crystal growth. 2014, Vol 391, pp 46-51, issn 0022-0248, 6 p.Article

Modeling and simulation of a novel susceptor composed of two materials in MOVPE reactorZHIMING LI; JINCHENG ZHANG; YUE HAO et al.Journal of crystal growth. 2014, Vol 402, pp 175-178, issn 0022-0248, 4 p.Article

Structural and electrical characteristics of lanthanum oxide formed on surface of LaB₆ film by annealingIGITYAN, A; KAFADARYAN, Y; AGHAMALYAN, N et al.Thin solid films. 2014, Vol 564, pp 415-418, issn 0040-6090, 4 p.Article

The effects of nitrogen incorporation on the properties of atomic layer deposited Ru thin films as a direct-plateable diffusion barrier for Cu interconnectMUN, Ki-Yeung; TAE EUN HONG; TAEHOON CHEON et al.Thin solid films. 2014, Vol 562, pp 118-125, issn 0040-6090, 8 p.Article

The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxyDU, Wen-Na; YANG, Xiao-Guang; WANG, Xiao-Ye et al.Journal of crystal growth. 2014, Vol 396, pp 33-37, issn 0022-0248, 5 p.Article

Vapor phase epitaxy of monocrystal tungsten coatingsYANWEI LV; XIAODONG YU; FUCHI WANG et al.Journal of crystal growth. 2014, Vol 387, pp 111-116, issn 0022-0248, 6 p.Article

Evolution of structural disorder using Raman spectra and Urbach energy in GeSe_0.5S_1.5 thin filmsANANTH KUMAR, R. T; CHITHRA LEKHA, P; SANJEEVIRAJA, C et al.Journal of non-crystalline solids. 2014, Vol 405, pp 21-26, issn 0022-3093, 6 p.Article

Growth and doping of semipolar GaN grown on patterned sapphire substratesSCHOLZ, F; MEISCH, T; CALIEBE, M et al.Journal of crystal growth. 2014, Vol 405, pp 97-101, issn 0022-0248, 5 p.Article

Growth of tellurium doped ultra-broadband tunnel junction for the next generation 5J solar cellXINYI LI; WEI ZHANG; HONGBO LU et al.Journal of crystal growth. 2014, Vol 405, pp 16-18, issn 0022-0248, 3 p.Article

Modelling water vapour permeability through atomic layer deposition coated photovoltaic barrier defectsELRAWEMI, Mohamed; BLUNT, Liam; FLEMING, Leigh et al.Thin solid films. 2014, Vol 570, pp 101-106, issn 0040-6090, 6 p., aArticle